Excess capacitance of ZnO-Au varactors
Identifieur interne : 000588 ( Main/Exploration ); précédent : 000587; suivant : 000589Excess capacitance of ZnO-Au varactors
Auteurs : RBID : ISTEX:339_1987_Article_BF00620609.pdfEnglish descriptors
Abstract
Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges.The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared.To bring further insight into the matter the concept of excess capacitance was introduced and 1/C2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz.Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beND= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasND′=1.02×1022 m−3.
DOI: 10.1007/BF00620609
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Akpinar</name><affiliation wicri:level="1"><mods:affiliation>Faculty of Science and Literature, Marmara University, Molla Gürani Cad. 16, Istanbul, Turkey</mods:affiliation><country xml:lang="fr">Turquie</country><wicri:regionArea>Faculty of Science and Literature, Marmara University, Molla Gürani Cad. 16, Istanbul</wicri:regionArea><wicri:noRegion>Istanbul</wicri:noRegion></affiliation><affiliation><mods:affiliation>Head of Physics Department, Turkish Scientific and Technical Research Council, Gebze, Istanbul, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1987_Article_BF00620609.pdf</idno><date when="1987">1987</date><idno type="doi">10.1007/BF00620609</idno><idno type="wicri:Area/Main/Corpus">000168</idno><idno type="wicri:Area/Main/Curation">000168</idno><idno type="wicri:Area/Main/Exploration">000588</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.20</term><term>73.40</term><term>85.30</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges.The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared.To bring further insight into the matter the concept of excess capacitance was introduced and 1/C2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz.Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beND= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasND′=1.02×1022 m−3.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="1c7d490c7dcc93fbc298d2c0d54d57e4faeeddf4"><titleInfo lang="eng"><title>Excess capacitance of ZnO-Au varactors</title></titleInfo><name type="personal"><namePart type="given">Ü.</namePart><namePart type="family">Dalay</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculty of Science and Literature, Marmara University, Molla Gürani Cad. 16, Istanbul, Turkey</affiliation></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Akpinar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Faculty of Science and Literature, Marmara University, Molla Gürani Cad. 16, Istanbul, Turkey</affiliation><affiliation>Head of Physics Department, Turkish Scientific and Technical Research Council, Gebze, Istanbul, </affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1986-04-23</dateCreated><dateCaptured encoding="w3cdtf">1986-08-17</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges.The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared.To bring further insight into the matter the concept of excess capacitance was introduced and 1/C2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz.Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beND= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasND′=1.02×1022 m−3.</abstract><subject lang="eng"><genre>PACS</genre><topic>73.40</topic><topic>85.30</topic><topic>71.20</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1987</partNumber><partNumber>Volume: 42</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-03-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 15</identifier><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00620609</identifier><identifier type="matrixNumber">Art14</identifier><identifier type="local">BF00620609</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>249</start><end>255</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin><recordIdentifier>339_1987_Article_BF00620609.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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